052-6437 rev a 7-2014 APT95GR65JDU60 symbol parameter ratings unit v ces collector emitter voltage 650 v v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 135 a i c2 continuous collector current @ t c = 76c 95 i cm pulsed collector current 1 380 scwt short circuit withstand time: v ce = 325v, v ge = 15v, t c =125c 10 s p d total power dissipation @ t c = 25c 446 w t j ,t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speciied. static electrical characteristics microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 350ma) 650 volts v ge(th) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) 3.5 5.0 6.5 v ce(on) collector-emitter on voltage (v ge = 15v, i c = 95a, t j = 25c) 1.9 2.4 collector-emitter on voltage (v ge = 15v, i c = 95a, t j = 125c) 2.4 collector-emitter on voltage (v ge = 15v, i c = 190a, t j = 25c) 2.6 i ces collector cut-off current (v ce = 650v, v ge = 0v, t j = 25c) 2 20 350 a collector cut-off current (v ce = 650v, v ge = 0v, t j = 125c) 2 200 i ges gate-emitter leakage current (v ge = 20v) 250 na unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is recommended for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). APT95GR65JDU60 650v, 95a, v ce (on) = 1.9v typical s ot -227 file # e145592 "ul recognized" g e e c combi (igbt and diode) isotop ? ultra fast npt - igbt ? with ultra soft recovery diode the ultra fast 650v npt-igbt ? family of products is the newest generation of igbts optimized for outstanding ruggedness and best trade-off between conduction and switching losses. features ? low saturation voltage ? low tail current ? rohs compliant ? smooth reverse recovery ? short circuit withstand rated ? high frequency switching ? ultra low leakage current ? snap-free switching downloaded from: http:///
052-6437 rev a 7-2014 APT95GR65JDU60 thermal and mechanical characteristics dynamic characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode. 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speciications and information contained herein. symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 5910 pf c oes output capacitance 1151 c res reverse transfer capacitance 565 v gep gate to emitter plateau voltage gate charge v ge = 15v v ce = 325v i c = 95a 7.5 v q g 3 total gate charge 312 420 nc q ge gate-emitter charge 42 55 q gc gate- collector charge 154 210 t d(on) turn-on delay time inductive switching (25c) v cc = 433v v ge = 15v i c = 95a r g = 4.3 4 t j = +25c 29 ns t r current rise time 76 t d(off) turn-off delay time 226 t f current fall time 84 e on2 5 turn-on switching energy 3150 4730 j e off 6 turn-off switching energy 2550 2830 t d(on) turn-on delay time inductive switching (125c) v cc = 433v v ge = 15v i c = 95a r g = 4.3 4 t j = +125c 29 ns t r current rise time 76 t d(off) turn-off delay time 246 t f current fall time 90 e on2 5 turn-on switching energy 4450 6675 j e off 6 turn-off switching energy 2745 4120 0 0.05 0.1 0.15 0.2 0.25 0.3 10 -5 10 -4 10 -3 0.1 10 -2 1 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) 0.28 c/w junction to case thermal resistance (diode) 0.63 v isolation rms voltage (50-60hz sinusoidal waveform from terminals to mounting base for 1 min.) 2500 w t package weight 1.03 oz 29.2 g torque maximum mounting torque 10 lbin 1.1 nm typical performance curves downloaded from: http:///
052-6437 rev a 7-2014 APT95GR65JDU60 typical performance curves 0 50 100 150 200 250 0 25 50 75 100 125 150 0 1 2 3 4 -50 -25 0 25 50 75 100 125 150 1 2 3 4 8 10 12 14 16 18 0 50 100 150 0 2 4 6 8 10 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 250s pulse test <0.5 % duty cycle t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 47.5a i c = 95a i c = 190a i c = 95a i c = 190a 13v 15v t j = 25c t j = -55c v ge = 15v t j = - 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 3, saturation voltage characteristics i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 4, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 6, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 7, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 9, dc collector current vs case temperature i c , dc collector current (a) 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 t j , junction temperature figure 8, breakdown voltage vs junction temperature 6.5v 7v i c = 47.5a 8.0v 8.5v 7.5v 9v i c (a) figure 2, max frequency vs current (t case = 75c) t j = 150c 0 20 40 60 80 100 120 20 40 60 80 100 120 140 frequency (khz) bv ces , breakdown voltage (normalized) downloaded from: http:///
052-6437 rev a 7-2014 APT95GR65JDU60 0 1000 2000 3000 4000 5000 02 55 07 5 100 125 0 2000 4000 6000 8000 01 02 03 04 05 0 0 1000 2000 3000 4000 5000 6000 7000 8000 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 typical performance curves 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 i c = 95a t j = 25c v ce = 520v v ce = 325v v ce = 130v gate charge (nc) figure 11, gate charge v ge , gate-to-emitter voltage (v) v ce = 433v, v ge =15v, r g = 4.3? t j = 25c or 125c t d(on) i ce , collector-to-emitter current (a) figure 12, turn-on time vs collector current switching time (ns) i ce , collector-to-emitter current (a) figure 13, turn-off time vs collector current switching time (ns) r g , gate resistance () figure 15, energy loss vs gate resistance i ce , collector-to-emitter current (a) figure 14, energy loss vs collector current switching energy loss (j) t j , junction temperature (c) figure 16, switching energy vs junction temperature switching energy losses (j) t r t d(off) t f v ce = 433v, v ge =15v, r g = 4.3? t j = 25c t j = 125c v ce = 433v, v ge =15v, r g = 4.3? t j = 25c t j = 125c e on2 e off e on2 e off switching energy loss (j) e off e on2 v ce = 433v, v ge =15v, r g = 4.3? i c = 95a 1.0e?10 1.0e?9 1.0e?8 0 10 20 30 40 50 c oes c res c ies v ce , collector-to-emitter voltage (volts) figure 10, capacitance vs collector-to-emitter voltage c, capacitance (f) 0.1 1 10 100 1000 1 10 100 1000 v ce , collector-to-emitter voltage figure 17, minimum switching safe operating area i c , collector current (a) v ce = 433v, v ge =15v, i c = 95a, t j = 125c 100s 10ms 0.1ms 100ms 1ms dc downloaded from: http:///
052-6437 rev a 7-2014 APT95GR65JDU60 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 -4 10 -3 10 -2 0.1 1 10 -5 static electrical characteristics dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speciied. ultra soft recovery anti-parallel diode z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 18. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : d = 0.9 symbol characteristic / test conditions APT95GR65JDU60 unit i f(av) maximum average forward current (t c = 75c, duty cycle = 0.5) 40 amps i f(rms) rms forward current (square wave, 50% duty) 73 i fsm non-repetitive forward surge current (t j = 45c, 8.3ms) tbd symbol characteristic / test conditions min typ max unit v f forward voltage i f = 60a 3.0 volts i f = 120a 4.0 i f = 60a, t j = 125c 2.5 symbol parameter test conditions min typ max unit t rr reverse recovery time i f = 1.0a, dif/dt= -100 a/s, v r = 30v, t j = 25c 28 ns t rr reverse recovery time i f = 60 amps dif/dt = -200 a/s v r = 433 volts t j = 25c 93 ns q rr reverse recovery charge 149 nc i rrm maximum reverse recovery current 4 amps e rr reverse recovery energy 2 j t rr reverse recovery i f = 60 amps dif/dt = -200 a/s v r = 433 volts t j = 125c 404 ns q rr reverse recovery charge 1496 nc i rrm maximum reverse recovery current 9 amps e rr reverse recovery energy 100 j t rr reverse recovery i f = 60 amps dif/dt = -1000 a/s v r = 433 volts t j = 125c 198 ns q rr reverse recovery charge 2844 nc i rrm maximum reverse recovery current 32 amps e rr reverse recovery energy 479 j s softness factor (tb/ta) i f = 30a, dif/dt= -1000 a/s, v r = 433v, t j = 125c 3 typical performance curves downloaded from: http:///
052-6437 rev a 7-2014 APT95GR65JDU60 0 10 20 30 40 50 60 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 75 100 125 150 25 50 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 1200 0 20 40 60 80 100 120 0 2 4 6 0 100 200 300 400 500 600 700 0 200 400 600 800 1000 1200 typical performance curves t j = 125 c v r = 433v 30a 60a 120a t rr q rr i rrm duty cycle = 0.5 t j = 150 c t j = 125 c v r = 433v 120a 30a 60a t j = 125 c v r = 433v 120a 60a 30a t j = 150 c t j = -55 c t j = 25 c t j = 125 c v f , anode-to-cathode voltage (v) figure 19, f forward current vs. forward voltage i f , forward current (a) - di f /dt, current rate of change(a/ s) figure 20, reverse recovery time vs. current rate of change t rr , reverse recovery time (ns) -di f /dt, current rate of change (a/ s) figure 21, reverse recovery charge vs. current rate of change q rr , reverse recovery charge (nc) -di f /dt, current rate of change (a/ s) figure 22, reverse recovery current vs. current rate of change i rrm , reverse recovery current (a) t j , junction temperature ( c) figure 23, dynamic parameters vs. junction temperature k f , dynamic parameters (normalized to 1000a/ s) case temperature ( c) figure 24, max average forward current vs. casetemperature i f(av) (a) downloaded from: http:///
052-6437 rev a 7-2014 APT95GR65JDU60 sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * emitter/anode collector/cathode gate r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * emitter/anode dimensions in millimeters and (inches) *emitter/anode terminals are shorted internally. current handling capability is equal for either emitter/anode terminal. pearson 2878 current transformer di f /d t adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform figure 26. diode reverse recovery waveform deinition figure 25. diode test circuit 4 3 1 2 zer o 0.25 i rr m i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t a - time to reach maximum reverse recovery current (i rrm ). t b - time from maximum reverse recovery current (i rrm ) to projected zero crossing based on a straight line from i rrm through 25% i rrm. t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve deined by i rrm and t rr. 5 1 2 3 4 6 7 7 5 6 downloaded from: http:///
052-6437 rev a 7-2014 APT95GR65JDU60 disclaimer: the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply. this document and the information conta ined herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in wri ting signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer's inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsem i. it is the customers and users re - sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions. downloaded from: http:///
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